AGM15N10D-G datasheet, mosfet equivalent, AGMSEMI

datasheet Download (Size : 2.07MB)

Features and benefits

* Advance high cell density Trench technology TO-252 Pin Configuration
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching D .

Application

100V 75mΩ 16A
* Features
* Advance high cell density Trench technology TO-252 Pin Configuration
* Lo.

Description

The AGM15N10D-G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) Product Summary This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 100V 75mΩ 16A .

Image gallery