AGM216ME datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

* Advance high cell density Trench technology
*Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*Low Thermal resistance
*10.

Application

* Features
* Advance high cell density Trench technology
*Low RDS(ON) to minimize conductive loss
*Low .

Description

The AGM216ME combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
* Features
* Advance high cell density Trench t.

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