AGM303AP mosfet equivalent, mosfet.
* Advance high cell density Trench technology
PDFN3.3*3.3 Pin Configuration
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching <.
30V
2.8mΩ
90A
* Features
* Advance high cell density Trench technology
PDFN3.3*3.3 Pin Configuration
.
The AGM303AP combines advanced trench
Product Summary
MOSFET technology with a low resistance package
to provide extremely low RDS(ON) . This device is ideal for load switch and battery
BVDSS
RDSON
ID
protection applications.
30V
2.8mΩ
90A
.
Image gallery
TAGS
Download (Size : 0.97MB)