AGM308AP mosfet equivalent, mosfet.
PDFN3*3 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Features
PDFN3*3 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to min.
The AGM308AP combines advanced trench MOSFET
Product Summary
technology with a low resistance package to provide
extremely low RDS(ON) .
BVDSS
RDSON
ID
This device is ideal for load switch and battery
30V
7.2mΩ
40A
protection applications..
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