AGM405DG datasheet, mosfet equivalent, AGMSEMI

datasheet Download (Size : 802.97KB)

1.0 ·

Features and benefits

BVDSS RDSON ID 40V 5.7mΩ 55A TO-252 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low G.

Application

* Features BVDSS RDSON ID 40V 5.7mΩ 55A TO-252 Pin Configuration
* Advance high cell density Trench tec.

Description

The AGM405DG combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 40.

Image gallery