AGM409D datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

TO-252 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
.

Application

BVDSS RDSON ID 40V 6.5mΩ 63A
* Features TO-252 Pin Configuration
* Advance high cell density Trench te.

Description

The AGM409D combines advanced trenchMOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. BVDSS RDSON ID 40V 6.5mΩ 63A

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