AGM40P13S datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

SOP8 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* .

Application

BVDSS RDSON ID -40V 16mΩ -8A
* Features SOP8 Pin Configuration
* Advance high cell density Trench tech.

Description

The AGM40P13S combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID -40V 16mΩ -8A <.

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