AGM4N65F datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

BVDSS RDSON ID 650V 2Ω 4A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching .

Application

* Features BVDSS RDSON ID 650V 2Ω 4A
* Advance high cell density Trench technology
* Low RDS(ON) to .

Description

The AGM4N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 650.

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