AGM55N15D mosfet equivalent, mosfet.
* Advance high cell density Trench technology
TO-252 Pin Configuration
* Low RDS(ON) to minimize conductive loss
D
* Low Gate Charge for fast switching
.
150V
48mΩ
23A
* Features
* Advance high cell density Trench technology
TO-252 Pin Configuration
* Lo.
The AGM55N15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
Product Summary
This device is ideal for load switch and battery
BVDSS
RDSON
ID
protection applications.
150V
48mΩ
23A
.
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