AGM6070A datasheet, mosfet equivalent, AGMSEMI

datasheet Download (Size : 694.83KB)

1.0 ·

Features and benefits

PDFN5*6 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching

Application

60V 7.0mΩ 76A
* Features PDFN5*6 Pin Configuration
* Advance high cell density Trench technology
* L.

Description

The AGM6070A combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 7.0mΩ 76A .

Image gallery