AGM60P30C mosfet equivalent, mosfet.
BVDSS -60V
RDSON 52mΩ
TO-220 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge .
* Features
BVDSS -60V
RDSON 52mΩ
TO-220 Pin Configuration
* Advance high cell density Trench technology
The AGM60P30C combines advanced trench MOSFET
Product Summary
technology with a low resistance package to provide
extremely low RDS(ON)
This device is ideal for load switch and battery protection applications.
* Features
BVDSS -60V
RDSON 52m.
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