AGM628D mosfet equivalent, mosfet.
TO-252 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
.
BVDSS
RDSON
ID
60V
26mΩ
30A
* Features
TO-252 Pin Configuration
* Advance high cell density Trench tec.
The AGM628D combines advanced trenchMOSFET
Product Summary
technology with a low resistance package to provide
extremely low RDS(ON) .
This device is ideal for load switch and battery protection applications.
BVDSS
RDSON
ID
60V
26mΩ
30A
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