AGM7N65F datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

650V 1.37Ω 7A
* Advance high cell density Trench technology TO-220F Pin Configuration
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fa.

Application

* Features 650V 1.37Ω 7A
* Advance high cell density Trench technology TO-220F Pin Configuration
* Lo.

Description

The AGM7N65F combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery BVDSS RDSON ID protection applications.
* Features .

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