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A616316 - 64K x 16 BIT HIGH SPEED CMOS SRAM

General Description

The A616316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on supply voltage 5V.

Key Features

  • n Center power pinout n Supply voltage: 5V±10% n Access times: 12/15 ns (max. ) n Current: Operating: -12: 170mA (max. ) -15: 165mA (max. ) Standby: TTL: 25mA (max. ) CMOS: 8mA (max. ) 64K X 16 BIT HIGH SPEED CMOS SRAM n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL-compatible n Common I/O using three-state output n Data retention voltage: 3V (min. ) n Available in 44-pin 400mil SOJ and 44-pin 400mil TSOP(II) forward packages. General.

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Datasheet Details

Part number A616316
Manufacturer AMIC Technology
File Size 139.96 KB
Description 64K x 16 BIT HIGH SPEED CMOS SRAM
Datasheet download datasheet A616316 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A616316 Series Preliminary 64K X 16 BIT HIGH SPEED CMOS SRAM Document Title 64K X 16 BIT HIGH SPEED CMOS SRAM Revision History Rev. No. History 0.0 Initial issue Issue Date July 14, 2000 Remark Preliminary PRELIMINARY (July, 2000, Version 0.0) AMIC Technology, Inc. A616316 Series Preliminary Features n Center power pinout n Supply voltage: 5V±10% n Access times: 12/15 ns (max.) n Current: Operating: -12: 170mA (max.) -15: 165mA (max.) Standby: TTL: 25mA (max.) CMOS: 8mA (max.) 64K X 16 BIT HIGH SPEED CMOS SRAM n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL-compatible n Common I/O using three-state output n Data retention voltage: 3V (min.) n Available in 44-pin 400mil SOJ and 44-pin 400mil TSOP(II) forward packages.