64K Datasheet | Specifications & PDF Download

PPT 10/100Base-T Dual port Magnetics Features: “Meet The Isolation,Insertion Loss and Return Loss Requirements of IEEE802.3 “Available Industry Stan

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MITSUBISHI LSls M5K4164ANP-12, -15 65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs,

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Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or b

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M7040N 64K x 72-bit Entry NETWORK PACKET SEARCH ENGINE PRELIMINARY DATA FEATURES SUMMARY s 64K DATA ENTRIES IN 72-BIT MODE s Figure 1. 388-ball PBGA

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INTEGRATED CIRCUITS 89C536/89C538 80C51 8-bit microcontroller family 16K/64K/512 FLASH Preliminary specification Supersedes data of 1997 Dec 02 IC20

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MITSUBISHI LSls MSL2764K, -2 65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5L2764 K is a hi

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SRAM Austin Semiconductor, Inc. 64K x 1 SRAM SRAM MEMORY ARRAY MT5C6401 PIN ASSIGNMENT (Top View) 22-Pin DIP (C) (300 MIL) A0 A1 A2 A3 A4 A5 A6 A7 Q

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® MOTOROLA MCM6665A MOS 64K BIT DYNAMIC RAM The MCM6665A is a 65,536 bit, high-speed, dynamic RandomAccess Memory. Organized as 65,536 one-bit word

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or b

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MIC:RON 1-· ,,,c, ,,CW PRELIMINARY MT5C64K16A1 REVOLUTIONARY PINOUT 64K x 16 SRAM SRAM FEATURES • Fast access times: 12, 15,20 and 25ns • Fa

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 64 K (8 K  8) Bit I2C MB85RC64V DS501-00013-5v0-E ■ DESCRIPTION The MB85RC64V is an FRAM (Ferroelectri

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UU:::RON 1-· ,,, ,,, ocno , , ADVANCE MT58LC64K1882 64K X 18 SYNCHRONOUS SRAM SYNCHRONOUS SRAM FEATURES • Fast access times: 9, 10, 12 and 17ns •

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

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M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump

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SRAM Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89524 • MIL-STD-883 MT5C2565 PIN ASSI

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