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HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 7008S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 7008S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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PPT 10/100Base-T Dual port Magnetics Features: “Meet The Isolation,Insertion Loss and Return Loss Requirements of IEEE802.3 “Available Industry Stan

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mos IM S 16 00 IM S 1601L CMOS High Performance 64K x 1 Static RAM FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rul

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mos IM S 16 00 IM S 1601L CMOS High Performance 64K x 1 Static RAM FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rul

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 64 K (8 K  8) Bit I2C MB85RC64V DS501-00013-5v0-E ■ DESCRIPTION The MB85RC64V is an FRAM (Ferroelectri

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® MOTOROLA MCM6665A MOS 64K BIT DYNAMIC RAM The MCM6665A is a 65,536 bit, high-speed, dynamic RandomAccess Memory. Organized as 65,536 one-bit word

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WINSTAR DISPLAY Co., Ltd.

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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25AA640/25LC640 64K SPI™ Bus Serial EEPROM Device Selection Table Part Number 25AA640 25LC640 25LC640 VCC Range 1.8-5.5V 2.5-5.5V 4.5-5.5V Max Clo

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GT24C64 GT24C64 2-WIRE 64K Bits Serial EEPROM Copyright © 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the ri

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MITSUBISHI LSls M5K4164ANP-12, -15 65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs,

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0.5±0.5 2.59 3.585 0.5±0.5 4.8 5.795 WEO012864K OLED Graphic 128x64 dots 73.0±0.2 POL 72.0±0.2 63.41(VA) 61.41 (AA) Active Area 2.7 Dots 128*64 2

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60A CY7C460A/CY7C462A CY7C464A/CY7C466A Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Features • High-speed, low-power, first-in first-out (FIFO)

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Preliminary FM24CL64 64Kb 2.7V-3.6V FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited read/

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W27C512 64K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C512 is a high speed, low power Electrically Erasable and Programmable Read O

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