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PPT 10/100Base-T Dual port Magnetics Features: “Meet The Isolation,Insertion Loss and Return Loss Requirements of IEEE802.3 “Available Industry Stan

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access

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Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, L

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PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5164A-10LF 64K Static RAM (Model Number: LH516A2) Spec. Issue Date: October 22, 2004 S

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HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 7008S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrical

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CY7C4281 CY7C4291 64K/128K x 9 Deep Sync FIFOs Features • High-speed, low-power, first-in first-out (FIFO) memories • 64K × 9 (CY7C4281) • 128K × 9

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www.DataSheet4U.com 1CY 7C15 12 PRELIMINARY CY7C1512 64K x 8 Static RAM Features • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low ac

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February 2005 ® AS7C3364PFD32B AS7C3364PFD36B 3.3V 64K X 32/36 pipeline burst synchronous SRAM Features • Organization: 65,536 words × 32 or 36 bits

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® LY616416 Rev. 1.1 5V 64K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Revised Test Conditi

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~EDI BKxB Static RAM CMOS, High Speed Monolithic EDIBBOBCA35145155170 High Speed 64K Monolithic SRAM Features The EDI8808CA is a high performance, l

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HIGH-SPEED 64K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT709089S/L Features: x True Dual-Ported memory cells which allow simultaneous acce

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www.DataSheet4U.com HIGH-SPEED 64K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features x x IDT709189L x x x x True Dual-Ported memory cells

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® LY626416 Rev. 1.4 64K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised typos i

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RoHS ASPC80 Power Shielded Inductors Inches (mm) Dimensions: 1.00 Max (25.4) 20 AWG/TCW 100K 0.550 Max (13.97) 1.15 Nominal (29.21) Features • Ma

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