* Wide Power Supply Range 2.7 to 3.6 Volts
* Very low standby current 1uA (Typical)
* Very low operating current 2.0mA at 1µs (Typical)
* Very low Page Mode operating current 0.8mA at 1µs (Typical)
* Simple memory control Dual Chip Enables (CE1 and CE2) Byte c
N04L1630C2B Datasheet (225.23 KB)
N04L1630C2B
AMI SEMICONDUCTOR
225.23 KB
4mb ultra-low power asynchronous cmos srams.
AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Ad.
📁 Related Datasheet
N04L163WC1A 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
N04L163WC1C 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
N04L163WC2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
N04L1618C2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
N04L63W1A 4Mb Ultra-Low Power Asynchronous CMOS SRAM (ON Semiconductor)
N04L63W2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM (ON Semiconductor)
N0412N N-Channel MOSFET (Renesas)
N0413N N-channel MOSFET (Renesas)
N0416SC020 Phase Control Thyristor Stud (IXYS)
N0416SC040 Phase Control Thyristor (IXYS)
