N04L1630C2B - 4Mb Ultra-Low Power Asynchronous CMOS SRAMs

AMI SEMICONDUCTOR

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Datasheet Details

Part number: N04L1630C2B
Manufacturer: AMI SEMICONDUCTOR
File Size: 225.23 KB
Datasheet: N04L1630C2B_AMISEMICONDUCTOR.pdf
Description: 4Mb Ultra-Low Power Asynchronous CMOS SRAMs

N04L1630C2B Product details

Description

Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Power Ground Not Connected (DOC# 14-02-042 ReI I ECN# 01-1374 The specifications of this device are subject to change without notice.For latest documentation see http://www.amis.com.N04L1630C2B AMI Semiconductor, I.

Features

Wide Power Supply Range 2.7 to 3.6 Volts.
Very low standby current 1uA (Typical).
Very low operating current 2.0mA at 1µs (Typical).
Very low Page Mode operating current 0.8mA at 1µs (Typical).
Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Very fast output enable access time 30ns OE Access Time 55ns Random Access Time 30ns Page Mode Access Time.

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