N04Q1618C2B - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Product Overview

AMI SEMICONDUCTOR

Datasheet Details

Part number	N04Q1618C2B
Manufacturer	AMI SEMICONDUCTOR
File Size	328.02 KB
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N04Q1618C2B Datasheet
Additional preview pages of the N04Q1618C2B datasheet.

Product details

Description

Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Power Power for I/O Core Ground Not Connected Stock No.23451-D 11/06 The specification is ADVANCE INFORMATION and subject to change without notice.2 N04Q1618C2B AMI Semiconductor, Inc.Functional Block D

Features

Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V.
Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ.
Very low standby current 50nA typical for 1.2V operation.
Very low operating current 400µA typical for 1.2V operation at 1µs.
Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs.
Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enabl.

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Published: Aug 17, 2010 |