• Part: N04Q1618C2B
  • Description: 4Mb Ultra-Low Power Asynchronous CMOS SRAM
  • Manufacturer: AMI SEMICONDUCTOR
  • Size: 328.02 KB
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AMI SEMICONDUCTOR
N04Q1618C2B
N04Q1618C2B is 4Mb Ultra-Low Power Asynchronous CMOS SRAM manufactured by AMI SEMICONDUCTOR.
AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 Advance Information .. 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow...