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N04Q1618C2B Datasheet 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Manufacturer: AMI SEMICONDUCTOR

Datasheet Details

Part number N04Q1618C2B
Manufacturer AMI SEMICONDUCTOR
File Size 328.02 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Download N04Q1618C2B Download (PDF)

Overview

AMI Semiconductor, Inc.

ULP Memory Solutions 670 North McCarthy Blvd.

Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04Q1618C2B Advance Information www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

Key Features

  • Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V.
  • Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ.
  • Very low standby current 50nA typical for 1.2V operation.
  • Very low operating current 400µA typical for 1.2V operation at 1µs.
  • Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs.
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enabl.