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N04L1630C2B - 4Mb Ultra-Low Power Asynchronous CMOS SRAMs

General Description

Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Power Ground Not C

Key Features

  • Wide Power Supply Range 2.7 to 3.6 Volts.
  • Very low standby current 1uA (Typical).
  • Very low operating current 2.0mA at 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Very fast output enable access time 30ns OE Access Time 55ns Random Access Time 30ns Page Mode Access Time.

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Datasheet Details

Part number N04L1630C2B
Manufacturer AMI SEMICONDUCTOR
File Size 225.23 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAMs
Datasheet download datasheet N04L1630C2B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Advance www.DataSheet4U.com Information 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM Overview The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.