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N04L1630C2B Datasheet 4mb Ultra-low Power Asynchronous CMOS Srams

Manufacturer: AMI SEMICONDUCTOR

Datasheet Details

Part number N04L1630C2B
Manufacturer AMI SEMICONDUCTOR
File Size 225.23 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAMs
Datasheet N04L1630C2B_AMISEMICONDUCTOR.pdf

N04L1630C2B Overview

AMI Semiconductor, Inc. Advance .. Information 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM Overview AMI Semiconductor, Inc. Pin Configurations (4Mb) LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4

N04L1630C2B Key Features

  • Wide Power Supply Range 2.7 to 3.6 Volts
  • Very low standby current 1uA (Typical)
  • Very low operating current 2.0mA at 1µs (Typical)
  • Very low Page Mode operating current 0.8mA at 1µs (Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
  • Very fast output enable access time 30ns OE Access Time 55ns Random Access Time 30ns Page Mode Access Time
  • Automatic power down to standby mode
  • TTL patible three-state output driver
  • RoHS pliant TSOP and BGA packages
  • 3.6V Speed Options 55ns 70ns Standby Operating Current (ISB), Current (Icc), Typical Typical 1µA 2 mA @ 1MHz

N04L1630C2B Applications

  • Wide Power Supply Range 2.7 to 3.6 Volts

N04L1630C2B Distributor