Datasheet4U.com

N04L1630C2B Datasheet PDF

AMI SEMICONDUCTOR N04L1630C2B

The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.
Part No. N04L1630C2B
Datasheet N04L1630C2B Download
Manufacturer
AMI SEMICONDUCTOR
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAMs
Buy Stock & Price
N04L1630C2B datasheet page 1 preview

FEATURES

● Wide Power Supply Range 2.7 to 3.6 Volts
● Very low standby current 1uA (Typical)
● Very low operating current 2.0mA at 1µs (Typical)
● Very low Page Mode operating current 0.8mA at 1µs (Typical)
● Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion
● Very fast output enable access time 30ns OE Access Time 55ns Random Access Time 30ns Page Mode Access Time
● Automatic power down to standby mode
● TTL compatible three-state output driver
● RoHS Compliant TSOP and BGA packages Product Family Part Number N04L1630C2BB2 Package Type 48-BGA Green Operating Temperature -40oC to +85oC Power Supply (Vcc) 2.7V - 3.6V Speed Options 55ns 70ns Standby Operating Current (ISB), Current (Icc), Typical Typical 1µA 2 mA @ 1MHz N04L1630C2BT2 44-TSOP II Green (DOC# 14-02-042 ReI I ECN# 01-1374 The specifications of this device are subject to change without notice. For latest documentation see 1 N04L1630C2B AMI Semiconductor, Inc.
N04L1630C2B page 2 preview N04L1630C2B page 3 preview