N04L1630C2B Datasheet | AMI SEMICONDUCTOR

Overview The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L1630C2B is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves operating power while improving the performance over standard SRAMs. The device can operate over a very wide temperature range of -40o C to +85o C and is available in JEDEC standard packages patible with other standard 256Kb x 16 SRAMs. Features - Wide Power Supply Range 2.7 to 3.6 Volts - Very low standby current 1u A (Typical) - Very low operating current 2.0m A at 1µs (Typical) - Very low Page Mode operating current 0.8m A at 1µs (Typical) - Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion - Very fast output enable access time 30ns OE Access Time 55ns Random Access Time 30ns Page Mode Access Time - Automatic power down to standby mode - TTL patible three-state output driver - Ro HS pliant TSOP and BGA packages Product Family Part Number N04L1630C2BB2 Package Type 48-BGA Green Operating Temperature -40o C to +85o C Power Supply (Vcc) 2.7V - 3.6V Speed Options 55ns 70ns Standby Operating Current (ISB), Current (Icc), Typical Typical 1µA 2 m A @ 1MHz N04L1630C2BT2 44-TSOP II Green (DOC# 14-02-042 Re I I ECN# 01-1374 The specifications of this device are subject to change without notice. For latest...