N08M1618L1A Datasheet - AMI SEMICONDUCTOR

8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

N08M1618L1A Features

* Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V and 37 deg C

* Very low operating current 1.0mA at 1.8V and 1µs (Typical)

* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typi

N08M1618L1A General Description

3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS VCCQ NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enabl.

N08M1618L1A Datasheet (225.52 KB)

N08M1618L1A Datasheet Preview — Preview of N08M1618L1A PDF

Datasheet Details

Part number:

N08M1618L1A

Manufacturer:

AMI SEMICONDUCTOR

File Size:

225.52 KB

Description:

8mb ultra-low power asynchronous medical cmos sram.
AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N08M1618L1A Ad.

📁 Related Datasheet

N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K X 16 bit (AMI SEMICONDUCTOR)

N08M163WL1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM (NanoAmp Solutions)

N08M163WL1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit (NanoAmp Solutions)

N0800S NPN SILICON EPITAXIAL TRANSISTOR (Renesas)

N080ICE-GB0 LCD (INNOLUX)

N080ICE-GB1 LCD MODULE (INNOLUX)

N0882NC400 Phase Control Thyristor (WESTCODE)

N0882NC420 HIGH POWER THYRISTOR (YZPST)

N0882NC420 Phase Control Thyristor (WESTCODE)

N0882NC440 Phase Control Thyristor (WESTCODE)

TAGS

N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM AMI SEMICONDUCTOR

Image Gallery

N08M1618L1A Features

N08M1618L1A General Description

Datasheet Details

File Size:

Description:

N08M1618L1A Distributor