N08M1618L1A Datasheet | AMI SEMICONDUCTOR

Overview The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. This device is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40o C to +85o C and is available in a JEDEC standard BGA package. Features - Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts - Very low standby current 0.5µA at 1.8V and 37 deg C - Very low operating current 1.0m A at 1.8V and 1µs (Typical) - Very low Page Mode operating current 0.5m A at 1.8V and 1µs (Typical) - Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion - Low voltage data retention Vcc = 1.2V - Special Processing to reduce Soft Error Rate (SER) - Automatic power down to standby mode Product Family Part Number Package Type Operating Temperature Power Supply Speed Standby Operating Current (ISB), Current (Icc), Max Max N08M1618L1AB - BGA 2.3V-3.6V(VCCQ) 85ns @ 1.7V -40o C to +85o C 1.4V-2.2V(V ) 150ns @ 1.4V CC 20 µA 2.5 m A @ 1MHz N08M1618L1AW Wafer Pin Configuration 1 A B C D E F G H LB I/O8 I/O9 VSS Pin Descriptions A0 A3 A5 A17 NC A14 A12 A9 OE UB I/O10 I/O11 A1 A4 A6 A7 A16 A15 A13 A10 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS VCCQ NC Pin Function Address Inputs Write Enable Input Chip...