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ANPEC

APM3004NU Datasheet Preview

APM3004NU Datasheet

N-Channel MOSFET

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APM3004NU
Features
30V/75A,
RDS(ON)=3.3m(typ.) @ VGS=10V
RDS(ON)=4.5m(typ.) @ VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
GD
S
Top View of TO-252
D
Applications
Power Management in Desktop Computer or
DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
APM3004N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device
APM3004N U :
APM3004N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. A.1 - Jan., 2007
www.anpec.com.tw




ANPEC

APM3004NU Datasheet Preview

APM3004NU Datasheet

N-Channel MOSFET

No Preview Available !

APM3004NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
IDP
300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID
Continuous Drain Current
TC=25°C
TC=100°C
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
EAS
Drain-Source Avalanche Energy, L=0.5mH
Notes:
* Current limited by bond wire.
Rating
30
±20
150
-55 to 150
40
200
130
*75
50
50
20
2.5
50
300
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Condition
APM3004NU
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
30
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
1.3
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
V
1
µA
30
1.8 2.5 V
±100 nA
3.3 4
m
4.5 5.9
ISD=30A, VGS=0V
IDS=40A, dlSD/dt=100A/µs
0.8 1.1 V
37
ns
26
nC
Copyright © ANPEC Electronics Corp.
2
Rev. A.1 - Jan., 2007
www.anpec.com.tw



Part Number APM3004NU
Description N-Channel MOSFET
Maker ANPEC
Total Page 3 Pages
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