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IRF634A - Advanced Power MOSFET

Datasheet Summary

Features

  • z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max. )@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ. ) IRF634A Advanced Power MOSFET BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220 1. Gate 2. Drain 3.Source Absolute Maximum Ratings Symbol Characteristic VDSS ID Drain-to-Source Voltage Continuous Drain Current (Tc=25 ) Continuous Drain Current (Tc=100 ) IDM VGS EAS IAR EAR dv/dt Drain Current-Pulsed (1) Ga.

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Datasheet Details

Part number IRF634A
Manufacturer ART CHIP
File Size 344.34 KB
Description Advanced Power MOSFET
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Full PDF Text Transcription

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FEATURES z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max.)@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ.) IRF634A Advanced Power MOSFET BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220 1. Gate 2. Drain 3.Source Absolute Maximum Ratings Symbol Characteristic VDSS ID Drain-to-Source Voltage Continuous Drain Current (Tc=25 ) Continuous Drain Current (Tc=100 ) IDM VGS EAS IAR EAR dv/dt Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) PD Total Power Dissipation (Tc=25 ) Linear Derating Factor TJ, TSTG Operating Junction and Storage Temperature Range TL Maximum Lead Temp.
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