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IRF634 - Advanced Power MOSFET

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Fairchild Semiconductor

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IRF634 Advanced Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRF634

Datasheet Details

Part number	IRF634
Manufacturer	Fairchild Semiconductor
File Size	224.03 KB
Description	Advanced Power MOSFET
Datasheet	IRF634 Datasheet
Additional preview pages of the IRF634 datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 0.327Ω (Typ. ) 1 2 3 IRF634A BVDSS = 250 V RDS(on) = 0.45Ω ID = 8.1 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous.

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Other Datasheets by Fairchild Semiconductor

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Published: Apr 16, 2005 |