Datasheet Details
| Part number | IRF823 |
|---|---|
| Manufacturer | ART CHIP |
| File Size | 373.44 KB |
| Description | N-Channel Power MOSFET |
| Download | IRF823 Download (PDF) |
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Download the IRF823 datasheet PDF. This datasheet also includes the IRF420 variant, as both parts are published together in a single manufacturer document.
| Part number | IRF823 |
|---|---|
| Manufacturer | ART CHIP |
| File Size | 373.44 KB |
| Description | N-Channel Power MOSFET |
| Download | IRF823 Download (PDF) |
|
|
|
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF420 IRF421 IRF422 IRF423 TO-220AB IRF820 IRF821 IRF822 IRF823 MTP2N45 MTP2N50 Product Summary Part Number VDSS RDS(on) ID at Tc=25¥ IRF420 500V 3.0 Ω 2.5A IRF421 450V 3.0 Ω 2.5A IRF422 500V 4.0 Ω 2.0A IRF423 450V 4.0 Ω 2.0A IRF820 500V 3.0 Ω 2.5A IRF821 450V 3.0 Ω 2.5A IRF822 500V 4.0 Ω 2.0A IRF823 450V 4.0 Ω 2.0A MTP2N45 450V 4.0 Ω 3.0A MTP2N50 500V 4.0 Ω 3.0A Notes For information concerning connection diagram and package outline, refer to Section 7.
ID at Tc=100¥ 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB www.artschip.com 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source Voltage 1 Drain to Gate Voltage 1 RGS=20kΩ Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s Rating IRF420/422 IRF820/822 MTP2N50 500 500 ±20 -55 to +150 275 Maximum Thermal Characteristics RӨJC RӨJA PD IDM Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Total Power Dissipation at Tc=25¥ Pulsed Drain Current 2 IRF420-423/ IRF820-823 3.12 30/80 40 10 Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Off Characteristics V(BR)DSS Drain Source Breakdown Voltage1 IRF420/422/820/822 500 MTP2N50 450 IRF421/423/821/823/ MTP2N45 ID
IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF823 | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
IRF823 | N-Channel Power MOSFET | Fairchild Semiconductor |
 |
IRF823 | N-Channel Power MOSFET | Motorola Inc |
 |
IRF823 | N-Channel Power MOSFET | Samsung semiconductor |
 |
IRF823 | N-Channel Power MOSFETs | Harris |
| Part Number | Description |
|---|---|
| IRF820 | N-Channel Power MOSFET |
| IRF821 | N-Channel Power MOSFET |
| IRF822 | N-Channel Power MOSFET |
| IRF840 | N-Channel Power MOSFET |
| IRF841 | N-Channel Power MOSFET |
| IRF842 | N-Channel Power MOSFET |
| IRF843 | N-Channel Power MOSFET |
| IRF340 | N-Channel Power MOSFETs |
| IRF341 | N-Channel Power MOSFETs |
| IRF342 | N-Channel Power MOSFETs |