Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
| Part number | IRFZ24N |
|---|---|
| Manufacturer | ART CHIP |
| File Size | 587.95 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFZ24N Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| IRFZ24N | N-channel enhancement mode TrenchMOS transistor | NXP |
| IRFZ24N | Power MOSFET | International Rectifier |
| IRFZ24N | N-Channel MOSFET Transistor | Inchange Semiconductor |
| IRFZ24NL | Power MOSFET | International Rectifier |
| IRFZ24NL | Power MOSFET | TRANSYS |
| Part Number | Description |
|---|---|
| IRFZ20 | 0.1 Ohm HEXFET |
| IRFZ22 | 0.1 Ohm HEXFET |
| IRFZ34N | Power MOSFET |
| IRFZ40 | N-CHANNEL POWER MOSFETS |
| IRFZ42 | N-CHANNEL POWER MOSFETS |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
