IRFZ24N Datasheet - ART CHIP

Power MOSFET

IRFZ24N General Description

Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device that HEXFET power MOSFETs are well known for, provides.

IRFZ24N Datasheet (587.95 KB)

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IRFZ24N

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ART CHIP

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587.95 KB

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Power mosfet.
IRFZ24N HEXFET ® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Fully Avalanche Rated V.

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IRFZ24N Power MOSFET ART CHIP

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IRFZ24N General Description

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