The IRFZ24N is a N-Channel MOSFET Transistor.
| Package | TO-220AB |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 19.8 mm |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFZ24N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an.
*Drain Current *ID=17A@ TC=25℃ *Drain Source Voltage- : VDSS= 55V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) *Fast Switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for low voltage, high speed switching application. |
| Part Number | IRFZ24N Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | ART CHIP |
| Overview | Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with t. V 12 Pulsed Drain Current æ 68 Power Dissipation 45 Linear Derating Factor 0.30 VGS EAS IAR EAR dv/dt Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy ç 71 Avalanche Current æ 10 Repetitive Avalanche Energy æ 4.5 Peak Diode Recovery dv/dt è 5.0 TJ Operating Junction and -. |
| Part Number | IRFZ24N Datasheet |
|---|---|
| Description | N-channel enhancement mode TrenchMOS transistor |
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes . very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ24N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC. |
| Part Number | IRFZ24N Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with th.
Current, VGS @ 10V Pulsed Drain Current # Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 5316 | 1+ : 0.20614 USD 2+ : 0.20095 USD 4+ : 0.19576 USD 8+ : 0.19057 USD |
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| Newark | 2904 | 1+ : 1.14 USD 10+ : 0.831 USD 100+ : 0.524 USD 500+ : 0.427 USD |
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| Newark | 0 | 1+ : 1.14 USD 10+ : 0.831 USD 100+ : 0.524 USD 500+ : 0.427 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRFZ24NL | International Rectifier | Power MOSFET |
| IRFZ24 | Fairchild Semiconductor | Power MOSFET |
| IRFZ24 | International Rectifier | Power MOSFET |
| IRFZ24L | International Rectifier | HEXFET Power MOSFET |
| IRFZ24V | International Rectifier | Power MOSFET |
| IRFZ24NS | TRANSYS | Power MOSFET |
| IRFZ24NS | VBsemi | N-Channel MOSFET |