Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFZ24NL | TRANSYS | Power MOSFET |
| IRFZ24NS | TRANSYS | Power MOSFET |
| IRFZ24N | NXP Semiconductors | N-channel enhancement mode TrenchMOS transistor |
| IRFZ24NSPbF | Inchange Semiconductor | N-Channel MOSFET |
| IRFZ24NLPbF | Inchange Semiconductor | N-Channel MOSFET |
| IRFZ24 | Fairchild Semiconductor | Power MOSFET |
| IRFZ24 | Vishay | Power MOSFET |
| IRFZ24L | Vishay | Power MOSFET |
| IRFZ24S | Vishay | Power MOSFET |
| IRFZ20 | Art Chip | 0.1 Ohm HEXFET |
