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IRFZ24L Datasheet Power MOSFET

Manufacturer: Vishay

Overview: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single 0.10 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Advanced Process Technology.
  • Surface Mount (IRFZ24S, SiHFZ24S).
  • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L).
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC.

IRFZ24L Distributor