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2SC2904 Datasheet

NPN SILICON RF POWER TRANSISTOR

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2SC2904
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2904 is a silicon
epitaxial plana type transistor designed
for high power amplifiers in HF band.
FEATURES:
Internal Input Matching Network
PG = 11.5 dB at 1000 W/30 MHz
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 22 A
VCBO
50 V
VCEO
20 V
VEBO
4.0 V
PDISS
200 W @ TC = 25 °C
TJ -55 °C to +175 °C
TSTG
-55 °C to +175 °C
θJC 0.75 °C/W
PACKAGE STYLE .500 6L FLG
CA
2x ØN
FULL R
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
BE
.725/18,42
GF
H
M IN IM U M
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
M A X IM U M
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
Common Emitter configuration
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 20 mA
BVCEO
IC = 100 mA
BVEBO
IE = 20 mA
ICBO
VCB = 15 V
IEBO
VCB = 3.0 V
hFE*
VCE = 10 V
IC = 1.0 A
PO
ηC
VCE = 12.5 V
PIN = 7.0 W
NOTE: *Pulse test, PW=150µS. duty=5%
f = 30 MHz
MINIMUM TYPICAL MAXIMUM
50
20
4.0
5.0
5.0
10 180
UNITS
V
V
mA
mA
---
100 110
55 60
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Free Datasheet http://www.Datasheet4U.com


Part Number 2SC2904
Description NPN SILICON RF POWER TRANSISTOR
Maker ASI
Total Page 1 Pages
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