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2SC2904 - Silicon NPN POWER TRANSISTOR

General Description

2SC2904 is a silicon NPN epitaxial planar type transistor specif ically designed f or high power amplif iers applications in HF band.Output stage of transmitter in HF band SSB mobile radio sets.

Key Features

  • Specified 12.5V, 30MHz Characteristics PO = 100W PEP GP ≥ 11.5dB. at 100 W/30 MHz Omnigold™ Metalization System M 1 A C 3 B C J 5 A N O K L P.

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Datasheet Details

Part number 2SC2904
Manufacturer HGSemi
File Size 316.14 KB
Description Silicon NPN POWER TRANSISTOR
Datasheet download datasheet 2SC2904 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G H HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2904 A A I A DESCRIPTION 2SC2904 is a silicon NPN epitaxial planar type transistor specif ically designed f or high power amplif iers applications in HF band.Output stage of transmitter in HF band SSB mobile radio sets. D H 2 4 6 7 G D E F FEATURES • • • • Specified 12.5V, 30MHz Characteristics PO = 100W PEP GP ≥ 11.5dB. at 100 W/30 MHz Omnigold™ Metalization System M 1 A C 3 B C J 5 A N O K L P DIMENSIONS UNIT mm 1.EMITTER 2.EMITTER 3.BASE 4.Collector 5.EMITTER 6.EMITTER 7.FIN A B C D E F G H I J K L M N O P 4.3 5.3 8.3 12.4 7.0 11.3 12.9 18.8 25.6 4.5 0.16 3.5 6.8 R-1.6 R-3.2 R-1 3.7 4.7 7.5 11.6 5.8 10.7 12.5 18.2 24.4 3.5 0.07 2.9 5.