2SC2904 - NPN SILICON RF POWER TRANSISTOR

ASI

General Description

The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band.

Key Features

Internal Input Matching Network.
PG = 11.5 dB at 1000 W/30 MHz.
Omnigold™ Metalization System D FU LL R B G .725/18,42 F E.

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2SC2904 npn silicon rf power transistor by ASI - Datasheet Preview

Datasheet Details

Part number	2SC2904
Manufacturer	ASI
File Size	45.20 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	2SC2904 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG C A 2x Ø N FEATURES: • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System D FU LL R B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 22 A 50 V 20 V 4.0 V 200 W @ TC = 25 °C -55 °C to +175 °C -55 °C to +175 °C 0.75 °C/W D IM A B C D E F G H I J K L M N K H M IN IM U M inches / m m M L J I M AXIM U M inches / m m .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.