HVV1214-025 transistor equivalent, rf transistor.
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS IDSX PD2 TS
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain.
operating over the frequency range of 1200 MHz and 1400 MHz.
FEATURES
High Power Gain Excellent Ruggedness 50V Supply Vo.
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz.
FEATURES
High Power Gain Excellent Ruggedness 50V S.
Image gallery
Download