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AT49F004 - 4-Megabit Flash Memory

Download the AT49F004 datasheet PDF. This datasheet also covers the AT49F004T variant, as both devices belong to the same 4-megabit flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 275 mW.

Key Features

  • Single Voltage Operation.
  • 5V Read.
  • 5V Programming.
  • Fast Read Access Time - 55 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 4K Words (8K bytes) Parameter Blocks.
  • One 240K Words (480K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Byte-by-Byte or Word-By-Word Programming - 10 µs Typical.
  • Hard.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49F004T-ATMEL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AT49F002NT 2-Megabit 5-volt Only Flash Memory ATMEL Corporation
AT49F002T 2-Megabit 5-volt Only CMOS Flash Memory ATMEL Corporation
AT49F040 5-volt-only in-system Flash Memory ATMEL Corporation
AT49F040B Flash Memory ATMEL Corporation
AT49F1024 1-Megabit 5-volt Only Flash Memory ATMEL Corporation

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT49F004T 4-Megabit Flash Memory
AT49F001 1-Megabit 5-volt Only Flash Memory
AT49F001A Flash Memory
AT49F001AN Flash Memory
AT49F001ANT Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Single Voltage Operation – 5V Read – 5V Programming • Fast Read Access Time - 55 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Byte-by-Byte or Word-By-Word Programming - 10 µs Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low-Power Dissipation – 50 mA Active Current – 300 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.