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AT28HC256N - High-speed Parallel EEPROM

Description

The AT28HC256N is a high-performance electrically erasable and programmable read only memory.

Its 256K of memory is organized as 32,768 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers access times to 90 ns with power dissipation of just 440 mW.

Features

  • Fast Read Access Time.
  • 90 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 64 Bytes.
  • Internal Control Timer Fast Write Cycle Times.
  • Page Write Cycle Time: 3 ms Maximum.
  • 1 to 64-byte Page Write Operation Low Power Dissipation: 300 µA Standby Current (CMOS) Hardware and Software Data Protection DATA Polling for End of Write Detecti.

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Other Datasheets by Atmel (Microchip)

Part Number Description
AT28HC256 256K (32K x 8) High-speed Parallel EEPROM
AT28HC64B 64K (8K x 8) High-speed Parallel EEPROM
AT28HC64BF 64K (8K x 8) High Speed Parallel EEPROM
AT28BV16 16K 2K x 8 Battery-Voltage CMOS E2PROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Features • Fast Read Access Time – 90 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms Maximum – 1 to 64-byte Page Write Operation Low Power Dissipation: 300 µA Standby Current (CMOS) Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology – Endurance: 105 Cycles – Data Retention: 10 Years Single 5V ±10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout 256 (32K x 8) High-speed Parallel EEPROM AT28HC256N Description The AT28HC256N is a high-performance electrically erasable and programmable read only memory.
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