Datasheet Summary
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Features
- Fast Read Access Time
- 90 ns
- Automatic Page Write Operation
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- Internal Address and Data Latches for 64 Bytes
- Internal Control Timer Fast Write Cycle Times
- Page Write Cycle Time: 3 ms Maximum
- 1 to 64-byte Page Write Operation Low Power Dissipation: 300 µA Standby Current (CMOS) Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology
- Endurance: 105 Cycles
- Data Retention: 10 Years Single 5V ±10% Supply CMOS and TTL patible Inputs and Outputs JEDEC Approved Byte-wide Pinout
256 (32K x 8) High-speed Parallel EEPROM AT28HC256N
Description
The AT28HC256N is a high-performance...
