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AUK

DN500F Datasheet Preview

DN500F Datasheet

NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)

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Semiconductor
Description
Extremely low collector-to-emitter saturation voltage
( VCE(SAT)=0.2V Typ. @IC /IB=3A/150mA)
Suitable for low voltage large current drivers
Complementary pair with DP500F
Switching Application
DN500F
NPN Silicon Transistor
Ordering Information
Type NO.
DN500F
Outline Dimensions
Marking
N5
: monthly code
0.50±0.1
4.0
-0.3
+0.5
-0.3
2.5 +0.2
Package Code
SOT - 89
unit : mm
1.00±0.3
3
2
1
KST-8012-002
PIN Connections
1. Base
2. Collector
3. Emitter
1




AUK

DN500F Datasheet Preview

DN500F Datasheet

NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)

No Preview Available !

DN500F
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
VC B O
VC E O
VE B O
Collector current
Collector dissipation
Junction temperature
Storage temperature
IC
PC
PC *
Tj
Tstg
* : When mounted on 40×40×0.8mm ceramic substate
Ratings
15
12
5
5
0.5
2
150
- 55~150
(Ta=25° C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Base-Emitter on voltage
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat1)
VBE(sat)
fT
Cob
Test Condition
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=15V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=3A
IC=3A, IB=150mA
IC=3A, IB=150mA
VCB=5V, IC=500mA
VCB=10V, IE=0, f=1MHz
Min.
15
12
5
-
-
160
40
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
-
(Ta=25° C)
Max. Unit
-V
-V
-V
0.1 µA
0.1 µA
320 -
--
0.3 V
1.2 V
- MHz
50 pF
KST-8012-002
2


Part Number DN500F
Description NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
Maker AUK
Total Page 3 Pages
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