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SMN03T80IS - Advanced N-Ch Power MOSFET

Key Features

  • BVDSS=800V Min.
  • Low gate charge: Qg=19nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=4.2Ω (Max. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SMN03T80IS SMN03T80 I-PAK (Short Lead) GDS I-PAK Marking Information SMN 03T80 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMN03T80IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  BVDSS=800V Min.  Low gate charge: Qg=19nC (Typ.)  Low drain-source On resistance: RDS(on)=4.2Ω (Max.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SMN03T80IS SMN03T80 I-PAK (Short Lead) GDS I-PAK Marking Information SMN 03T80 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -.