• Part: SMN0470F
  • Description: Advanced N-Ch Power MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 343.60 KB
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SMN0470F Key Features

  • Drain-Source breakdown voltage: BVDSS=700V (Min.)
  • Low gate charge: Qg=13nC (Typ.)
  • Low drain-source On resistance: RDS(on)=2.36Ω (Max.)
  • 100% avalanche tested
  • RoHS pliant device
  • G: Option Code (H: Halogen Free) -. F: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device C

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