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TENTATIVE
Semiconductor
STK03Y60
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=4pF(Typ.) • Low gate charge : Qg=12nC(Typ.) • Low RDS(on) : RDS(on)=5.5Ω(Typ.) www.DataSheet4U.com
Ordering Information
Type NO. STK03Y60 Marking STK03Y60 Package Code TO-92
Outline Dimensions
4.40~4.80 4.40~4.80
unit : mm
0.50 Max. 13.50~14.50 1.27 Typ.
1.27 Typ.
1
3.40~3.60
2 3
PIN Connections 1. Gate 2. Drain 3. Source
0.45 Max.
TENTATIVE
1
TENTATIVE
STK03Y60
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
** * **
(Ta=25°C)
Symbol
VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
600 ±30 0.3 1.2 625 0.3 53 0.