SUN02A60F - New Generation N-Ch Power MOSFET
SUN02A60F Features
* Low drain-source On resistance: RDS(on)=3.9Ω (Typ.)
* Low gate charge: Qg=7.5nC (Typ.)
* Low reverse transfer capacitance: Crss=5pF (Typ.)
* Lower EMI noise
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SUN02A60F SUN0