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SUN04A65IS
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=2.4Ω (Typ.) Low gate charge: Qg=12nC (Typ.) Low reverse transfer capacitance: Crss=6pF (Typ.) Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN04A65IS
SUN04A65
I-PAK (Short Lead)
GDS
I-PAK (Short Lead)
Marking Information
SUN 04A65
YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
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