SUN04A65IS Description
SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION.
SUN04A65IS Key Features
- Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)
- Low gate charge: Qg=12nC (Typ.)
- Low reverse transfer capacitance: Crss=6pF (Typ.)
- Lower EMI noise
- RoHS pliant device
- 100% avalanche tested
- YWW: Date Code (year, week)