SUN02A60F Overview
SUN02A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION.
SUN02A60F Key Features
- Low drain-source On resistance: RDS(on)=3.9Ω (Typ.)
- Low gate charge: Qg=7.5nC (Typ.)
- Low reverse transfer capacitance: Crss=5pF (Typ.)
- Lower EMI noise
- RoHS pliant device
- 100% avalanche tested