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AUK
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THN4301E Datasheet Preview

THN4301E Datasheet

SiGe NPN Transistor

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THN4301E pdf
Semiconductor
Application
LNA and wide band amplifier up to GHz range
Features
o Low Noise Figure
NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA
NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain
MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA
MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, IC = 5 mA
o High Transition Frequency
fT = 15 GHz at f = 2 GHz, VCE = 3 V, IC = 25 mA
THN4301 Series
SOT-523
SiGe NPN Transistor
Unit in mm
hFE Classification
Marking AH1
AH2
hFE 125 to 300 80 to 160
Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO
VEBO
IC
PT
TSTG
TJ
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Pin Configuration
Pin No
Symbol
1B
2E
3C
Description
Base
Emitter
Collector
Available Package
Product
Package
THN4301U SOT-323
THN4301Z SOT-343
THN4301E SOT-523
Unit : mm
Dimension
2.01.25, 1.0t
2.01.25, 1.0t
1.60.8, 0.8t
Ratings
15
6
2.5
65
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
1



AUK
AUK

THN4301E Datasheet Preview

THN4301E Datasheet

SiGe NPN Transistor

No Preview Available !

THN4301E pdf
THN4301 Series
Electrical Characteristics ( TA = 25 )
Symbol
Parameter
Test Condition
Min.
ICBO
Collector Cut-off Current
ICEO
VCB = 10 V, IE = 0 mA
VCE = 6 V, IB = 0 mA
-
-
IEBO Emitter Cut-off Current
VEB = 1 V, IC = 0 mA
-
hFE DC Current Gain
VCE = 3 V, IC = 15 mA
80
fT Transition Frequency
VCE = 3 V, IC = 20 mA
-
CCB Collector to Base Capacitance VCB = 10 V, f = 1 MHz
-
|S21|2 Insertion Power Gain
VCE = 3 V, IC = 15 mA, f = 2 GHz 6.0
VCE = 1 V, IC = 10 mA, f = 2 GHz 5.0
MAG Maximum Available Gain
VCE = 3 V, IC = 15 mA, f = 2 GHz 10.2
VCE = 1 V, IC = 10 mA, f = 2 GHz 9.5
NFmin Minimum Noise Figure
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
-
-
rn Noise Resistance
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
-
-
GA Associated Gain
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
-
-
Value
Typ.
-
-
-
200
14
0.63
8.0
7.0
12.2
11.5
1.5
1.7
0.04
0.05
9.5
8.0
Max.
0.5
5.0
0.5
300
-
-
-
-
-
-
-
-
-
-
-
-
Unit
uA
uA
uA
GHz
pF
dB
dB
dB
dB
2


Part Number THN4301E
Description SiGe NPN Transistor
Maker AUK
Total Page 15 Pages
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THN4301E pdf
THN4301E Datasheet PDF
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