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THN405Z - SiGe NPN Transistor

Datasheet Summary

Features

  • s - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz - Low noise figure NF = 1.4 dB at VCE = 2 V, IC = 2 mA, f = 1.8 GHz.
  • Absolute Maximum Ratings ( TA = 25 ℃ ) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissip.

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Datasheet Details

Part number THN405Z
Manufacturer AUK
File Size 174.19 KB
Description SiGe NPN Transistor
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Semiconductor THN405Z SiGe NPN Transistor □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 Unit in mm □ Features - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz - Low noise figure NF = 1.4 dB at VCE = 2 V, IC = 2 mA, f = 1.
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