HSCH-5330 - Beam Lead Schottky Diodes

This page provides the datasheet information for the HSCH-5330, a member of the HSCH-5314 Beam Lead Schottky Diodes family.

Product Overview

AVAGO

Part number	HSCH-5330
Manufacturer	AVAGO
File Size	75.53 KB
Description	Beam Lead Schottky Diodes
Datasheet	HSCH-5330 Datasheet
Additional preview pages of the HSCH-5330 datasheet.

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

Platinum tri-metal system High temperature stability.
Silicon nitride passivation Stable, reliable performance.
Low noise figure Guaranteed 7.5 dB at 26 GHz.
High uniformity Tightly controlled process insures uniform RF characteristics.
Rugged construction 4 grams minimum lead pull.
Low capacitance 0.10 pF max. at 0 V.
Polyimide scratch protection The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Eq.

Other Datasheets by AVAGO

Published: Dec 8, 2014 |