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VMMK-2203 Datasheet Preview

VMMK-2203 Datasheet

0.9-11 GHz E-pHEMT Wideband Amplifier

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VMMK-2203
0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package
Data Sheet
Description
Avago Technologies has combined its industry leading
E-pHEMT technology with a revolutionary wafer level
package (WLP).
The VMMK-2203 is an easy-to-use GaAs MMIC amplifier
that offers excellent gain and noise figure from 0.9 to 11
GHz. The input and output are matched to 50 Ω so no
external matching is needed. Bias is supplied through a
simple external choke and DC blocking network.
The wafer level package is small and ultra thin, yet can be
handled and placed with standard 0402 pick and place
assembly. This product is easy to use since it requires only
a single positive DC voltage for bias and no matching co-
efficients are required for impedance matching to 50 Ω
systems.
WLP 0402, 1mm x 0.5mm x 0.25 mm
DY
Pin Connections (Top View)
Input DY
Output / Vdd
Features
1 x 0.5 mm Surface Mount Package
Ultrathin (0.25mm)
Gain Block
Ultra-wide Bandwidth
5V Supply
RoHS6 + Halogen Free
Specifications (6GHz, 5V, 25mA Typ.)
Noise Figure: 2.0dB typical
Associated Gain: 16.5dB
Output IP3: +14dBm
Output IP3: +5dBm
Applications
Low Noise and Driver for Cellular/PCS and WCDMA
Base Stations
2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax note-
book computer, access point and mobile wireless
applications
802.16 & 802.20 BWA systems
WLL and MMDS Transceivers
Point-to-Point Radio
UWB
Antennas
Input Amp
Note:
“D” = Device Code
“Y” = Month Code
Output
/ Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.




AVAGO

VMMK-2203 Datasheet Preview

VMMK-2203 Datasheet

0.9-11 GHz E-pHEMT Wideband Amplifier

No Preview Available !

Table 1. Absolute Maximum Ratings
Sym Parameters/Condition
Vd Supply Voltage (RF Output) [2]
Id Device Current [2]
Pin, max
Pdiss
Tch
CW RF Input Power (RF Input) [3]
Total Power Dissipation
Max channel temperature
TSTG Storage Temperature
θjc Thermal Resistance [4]
Notes
1. Operation of this device above any one of these parameters may cause permanent damage
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C
4. Thermal resistance is measured from junction to board using IR method
Unit
V
mA
dBm
mW
°C
°C
°C/W
Absolute Max
10
50 mA
+13 dBm
300 mW
+150
+150
107
Table 2. DC and RF Specifications
TA= 25°C, Frequency = 6 GHz, Vd = 5V, Id = 25mA, Zin = Zout = 50(unless otherwise specified)
Sym
Parameters/Condition
Unit
Id Device Current
mA
NF[1]
Noise Figure
dB
Ga [1]
Associated Gain
dB
OIP3 [2,3]
Output 3rd Order Intercept
dBm
Output P-1dB[2]
Output Power at 1dB Gain
Compression (Pin = 0dBm)
dBm
IRL [2]
Input Return Loss
dB
ORL [2]
Output Return Loss
dB
Notes:
1. Measure Data obtained using 300um G-S probe on production wafer
2. Measure Data obtained using 300um G-S-G probe on PCB substrate
3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, Pin = -20dB
Minimum
20.0
15
Typ.
25
2
16.5
+14
+5
-11
-16
Maximum
30.0
2.5
18



Part Number VMMK-2203
Description 0.9-11 GHz E-pHEMT Wideband Amplifier
Maker AVAGO
Total Page 11 Pages
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