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VMMK-1218 - 0.5 to 18 GHz Low Noise E-PHEMT

General Description

Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package.

The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply.

Key Features

  • Sub-miniature 0402 (1mm x 0.5mm) Surface Mount Leadless Package.
  • Low height (0.25mm).
  • Frequency Range 0.5 to 18 GHz.
  • Enhancement Mode [1].
  • 0.25 micron gate width.
  • Tape and Reel packaging option available.
  • Point MTTF > 300 years at 120oC channel temperature Specifications.
  • 0.7 dB Fmin.
  • 9.0 dB Ga.
  • +22 dBm output 3rd order intercept.
  • +12 dBm output power.

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Other Datasheets by Avago Technologies (now Broadcom)

Part Number Description
VMMK-1225 0.5 to 26 GHz Low Noise E-PHEMT
VMMK-2103 E-pHEMT Amplifier
VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier
VMMK-2303 0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA
VMMK-2403 2 to 4 GHz GaAs High Linearity LNA

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply. The GaAsCap wafer scale sub-miniature leadless package is small and ultra thin, yet can be handled and placed with standard 0402 pick and place assembly. The use of 0.25 micron gates allow a ultra low noise figure (below 1dB from 500 MHz to 12 GHz) with respectable associated gain. With a flat transconductance over bias and frequency the VMMK-1218 provides excellent linearity of over 30 dBm and power over 15 dBm at one dB compression.