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AW5008M1FDR Datasheet Preview

AW5008M1FDR Datasheet

Low-Noise Amplifier

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AW5008M1FDR
Jan 2019 V1.1
Low Noise Amplifier for LTE Middle Band
FEATURES
GENERAL DESCRIPTION
Operating frequency 1805MHz to 2200MHz
Noise figure(NF) =0.9dB
High power gain =16dB
In band IIP3=+4.0dBm
Input 1dB compression point=-3dBm
Supply voltage: 1.5V to 3.1V
Supply current 8.2mA
The AW5008M1 is a Low Noise Amplifier for LTE
receiver applications. The AW5008M1 requires
l
tia only one external input matching inductor, reduces
assembly complexity and the PCB area, enabling a
cost-effective solution.
Input and output DC decoupled
Requires only one input matching inductor
n The AW5008M1 achieves low noise figure, high
linearity, high gain, over a wide range of supply
Integrated matching for the output
FCDFN 1.1mmX0.7mmX0.37mm -6L package
2kV HBM ESD protection (including RFIN and
RFOUT pin)
APPLICATIONS
e voltages from 1.5V up to 3.1V. All these features
make AW5008M1 an excellent choice for LTE LNA
fid as it improves sensitivity with low noise figure and
high gain, provides better immunity against jammer
signals with high linearity, reduces filtering
requirement of preceding stage and hence reduces
Cell phones
Tablets
Other RF front-end modules
nthe overall cost.
oThe AW5008M1 is available in a small lead-free,
RoHS-Compliant, FCDFN 1.1mmX0.7mmX0.37
C TYPICAL APPLICATION CIRCUIT
mm -6L package.
icGND 1
inSUPPLY
VOLTAGE
R1 VCC
2
C1
(optional)
w
RF OUTPUT RFOUT
3
a
AW5008M1
BIAS
C1, R1 Closed to LNA
EN
6
LOGIC
CONTROL
RFIN
5
L1
RF INPUT
4 GND
Figure 1 Typical Application Circuit of AW5008M1
All trademarks are the property of their respective owners.
www.awinic.com.cn
1
Copyright © 2018 SHANGHAI AWINIC TECHNOLOGY CO., LTD




AWINIC

AW5008M1FDR Datasheet Preview

AW5008M1FDR Datasheet

Low-Noise Amplifier

No Preview Available !

AW5008M1FDR
Jan 2019 V1.1
PIN CONFIGURATION AND TOP MARK
AW5008M1FDR
(Top View)
AW5008M1FDR Marking
(Top View)
GND 1
6 EN
1
6
l
VCC 2
RFOUT 3
5 RFIN
4 GND
2
5
a 3
4
ti GAW5008M1FDR
n XProduction Tracing Code
Figure 2 Pin Configuration and Top Mark
e
PIN DEFINITION
fid
No.
NAME
nDESCRIPTION
1
2
GND
VCC
o Ground.
Supply connection.
3
4
RFOUT
GND
C RF output
Ground
5
RFIN
RF input
6
ic EN
EN (high level) supports 1.8V/2.8V IO with internal 150Kohm
pull-down resistor.
in
aw
www.awinic.com.cn
2
Copyright © 2018 SHANGHAI AWINIC TECHNOLOGY CO., LTD


Part Number AW5008M1FDR
Description Low-Noise Amplifier
Maker AWINIC
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