Datasheet Details
| Part number | AW5008H1FDR |
|---|---|
| Manufacturer | AWINIC |
| File Size | 690.85 KB |
| Description | Low-Noise Amplifier |
| Datasheet | AW5008H1FDR-AWINIC.pdf |
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Overview: AW5008H1FDR Jan 2019 V1.1 Low Noise Amplifier for LTE High Band.
| Part number | AW5008H1FDR |
|---|---|
| Manufacturer | AWINIC |
| File Size | 690.85 KB |
| Description | Low-Noise Amplifier |
| Datasheet | AW5008H1FDR-AWINIC.pdf |
|
|
|
l Operating frequency 2300MHz to 2690MHz Noise figure(NF) =1.1dB a High power gain =15.5dB In band IIP3=+5.1dBm i Input 1dB pression point=-4dBm t Supply voltage: 1.5V to 3.1V Supply current 7.5mA n Input and output DC decoupled Requires only one input matching inductor Integrated matching for the output e FCDFN 1.1mmX0.7mmX0.37mm -6L package 2kV HBM ESD protection (including RFIN and d RFOUT pin) fi APPLICATIONS n Cell phones Tablets o Other RF front-end modules The AW5008H1 is a Low Noise Amplifier designed for LTE receiver applications.
The AW5008H1 requires only one external input matching inductor, reduces assembly plexity and the PCB area, enabling a cost-effective solution.
The AW5008H1 achieves low noise figure, high linearity, high gain, over a wide range of supply voltages from 1.5V up to 3.1V.
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