• Part: AW5008H1FDR
  • Description: Low-Noise Amplifier
  • Manufacturer: AWINIC
  • Size: 690.85 KB
Download AW5008H1FDR Datasheet PDF
AWINIC
AW5008H1FDR
AW5008H1FDR is manufactured by AWINIC.
Jan 2019 V1.1 Low Noise Amplifier for LTE High Band Features GENERAL DESCRIPTION l - Operating frequency 2300MHz to 2690MHz - Noise figure(NF) =1.1dB a - High power gain =15.5dB - In band IIP3=+5.1dBm i - Input 1dB pression point=-4dBm t - Supply voltage: 1.5V to 3.1V - Supply current 7.5mA n - Input and output DC decoupled - Requires only one input matching inductor - Integrated matching for the output e - FCDFN 1.1mmX0.7mmX0.37mm -6L package - 2kV HBM ESD protection (including RFIN and d RFOUT pin) fi APPLICATIONS n - Cell phones - Tablets o - Other RF front-end modules The AW5008H1 is a Low Noise Amplifier designed for LTE receiver applications. The AW5008H1 requires...