l
Operating frequency 2300MHz to 2690MHz
Noise figure(NF) =1.1dB
a
High power gain =15.5dB
In band IIP3=+5.1dBm
i
Input 1dB compression point=-4dBm t
Supply voltage: 1.5V to 3.1V
Supply current 7.5mA
n
Input and output DC decoupled
Requires only
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AW5008H1FDR
Jan 2019 V1.1
Low Noise Amplifier for LTE High Band
FEATURES
GENERAL DESCRIPTION
l Operating frequency 2300MHz to 2690MHz
Noise figure(NF) =1.1dB
a High power gain =15.5dB
In band IIP3=+5.1dBm
i Input 1dB compression point=-4dBm t Supply voltage: 1.5V to 3.1V
Supply current 7.5mA
n Input and output DC decoupled
Requires only one input matching inductor
Integrated matching for the output
e FCDFN 1.1mmX0.7mmX0.37mm -6L package
2kV HBM ESD protection (including RFIN and
d RFOUT pin) fi APPLICATIONS n Cell phones
Tablets
o Other RF front-end modules
The AW5008H1 is a Low Noise Amplifier designed for LTE receiver applications.
AW5008H1FDR Datasheet
