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AW5008M1FDR - Low-Noise Amplifier

General Description

Operating frequency 1805MHz to 2200MHz Noise figure(NF) =0.9dB High power gain =16dB In band IIP3=+4.0dBm Input 1dB compression point=-3dBm Supply voltage: 1.5V to 3.1V Supply current 8.2mA The AW5008M1 is a Low Noise Amplifier for LTE receiver application

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Datasheet Details

Part number AW5008M1FDR
Manufacturer AWINIC
File Size 927.76 KB
Description Low-Noise Amplifier
Datasheet download datasheet AW5008M1FDR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AW5008M1FDR Jan 2019 V1.1 Low Noise Amplifier for LTE Middle Band FEATURES GENERAL DESCRIPTION  Operating frequency 1805MHz to 2200MHz  Noise figure(NF) =0.9dB  High power gain =16dB  In band IIP3=+4.0dBm  Input 1dB compression point=-3dBm  Supply voltage: 1.5V to 3.1V  Supply current 8.2mA The AW5008M1 is a Low Noise Amplifier for LTE receiver applications. The AW5008M1 requires l tia only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution.  Input and output DC decoupled  Requires only one input matching inductor n The AW5008M1 achieves low noise figure, high linearity, high gain, over a wide range of supply  Integrated matching for the output  FCDFN 1.1mmX0.7mmX0.