Datasheet Details
| Part number | AW5008M1FDR |
|---|---|
| Manufacturer | AWINIC |
| File Size | 927.76 KB |
| Description | Low-Noise Amplifier |
| Datasheet | AW5008M1FDR-AWINIC.pdf |
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Overview: AW5008M1FDR Jan 2019 V1.1 Low Noise Amplifier for LTE Middle.
| Part number | AW5008M1FDR |
|---|---|
| Manufacturer | AWINIC |
| File Size | 927.76 KB |
| Description | Low-Noise Amplifier |
| Datasheet | AW5008M1FDR-AWINIC.pdf |
|
|
|
Operating frequency 1805MHz to 2200MHz Noise figure(NF) =0.9dB High power gain =16dB In band IIP3=+4.0dBm Input 1dB pression point=-3dBm Supply voltage: 1.5V to 3.1V Supply current 8.2mA The AW5008M1 is a Low Noise Amplifier for LTE receiver applications.
The AW5008M1 requires l tia only one external input matching inductor, reduces assembly plexity and the PCB area, enabling a cost-effective solution.
Input and output DC decoupled Requires only one input matching inductor n The AW5008M1 achieves low noise figure, high linearity, high gain, over a wide range of supply Integrated matching for the output FCDFN 1.1mmX0.7mmX0.37mm -6L package 2kV HBM ESD protection (including RFIN and RFOUT pin) APPLICATIONS e voltages from 1.5V up to 3.1V.
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|---|---|
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