• Part: AW5008M1FDR
  • Description: Low-Noise Amplifier
  • Manufacturer: AWINIC
  • Size: 927.76 KB
Download AW5008M1FDR Datasheet PDF
AWINIC
AW5008M1FDR
AW5008M1FDR is manufactured by AWINIC.
Jan 2019 V1.1 Low Noise Amplifier for LTE Middle Band Features GENERAL DESCRIPTION - Operating frequency 1805MHz to 2200MHz - Noise figure(NF) =0.9dB - High power gain =16dB - In band IIP3=+4.0dBm - Input 1dB pression point=-3dBm - Supply voltage: 1.5V to 3.1V - Supply current 8.2mA The AW5008M1 is a Low Noise Amplifier for LTE receiver applications. The AW5008M1 requires l tia only one external input matching inductor, reduces assembly plexity and the PCB area, enabling a cost-effective solution. - Input and output DC decoupled - Requires only one input matching inductor n The AW5008M1 achieves low noise figure, high linearity, high gain, over a wide range of...