AW5008M1FDR
AW5008M1FDR is manufactured by AWINIC.
Jan 2019 V1.1
Low Noise Amplifier for LTE Middle Band
Features
GENERAL DESCRIPTION
- Operating frequency 1805MHz to 2200MHz
- Noise figure(NF) =0.9dB
- High power gain =16dB
- In band IIP3=+4.0dBm
- Input 1dB pression point=-3dBm
- Supply voltage: 1.5V to 3.1V
- Supply current 8.2mA
The AW5008M1 is a Low Noise Amplifier for LTE receiver applications. The AW5008M1 requires l tia only one external input matching inductor, reduces assembly plexity and the PCB area, enabling a cost-effective solution.
- Input and output DC decoupled
- Requires only one input matching inductor n The AW5008M1 achieves low noise figure, high linearity, high gain, over a wide range of...