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AM1030N - 100V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability ™ PIN.

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Datasheet preview – AM1030N

Datasheet Details

Part number AM1030N
Manufacturer AXElite
File Size 559.86 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet AM1030N Datasheet
Additional preview pages of the AM1030N datasheet.

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Full PDF Text Transcription

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AM1030N 100V N-Channel MOSFET ™ GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. ™ FEATURES 3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability ™ PIN ASSIGNMENT The package of AM1030N is€ SOT-223; the pin assignment is given by: VÛmw`R•y Ñb ww w ot f o g . ec o h.
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