3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability ™ PIN ASSIGNMENT The package.

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. ™ FEATURES 3.0A, 100V, RDS(on.

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

AM1037

AM100

AM100-G

AM1000

AM1001

AM1001-7R

AM1001-9R

AM1002

AM1008

AM100N04-02D

AM100N20-40FP

AM101

AM1010

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