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9435GH Advanced Power Electronics AP9435GH

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Description G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is wid ely used for commercial-industrial application. G D D S TO-252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-So...
Features ximum Thermal Resistance, Junction-ambient Value 10 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201017075-1/4 http://www.Datasheet4U.com AP9435GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Co...

Datasheet PDF File 9435GH Datasheet - 245.68KB
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